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DATA SHEET
GaAs MES FET
NE72218
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
FEATURES
* High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz * Gate length * Gate width * 4-pin super minimold package * Tape & reel packaging only available : Lg = 0.8 m : Wg = 400 m
ORDERING INFORMATION
Part Number NE72218-T1 Package 4-pin super minimold Supplying Form * 8 mm wide embossed taping * Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape * Qty 3 kpcs/reel * 8 mm wide embossed taping * Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape * Qty 3 kpcs/reel
NE72218-T2
Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order: NE72218).
ABSOLUTE MAXIMUM RATINGS (TA = +25 C)
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID Ptot Tch Tstg Ratings 5.0 -5.0 IDSS 250 125 -65 to +125 Unit V V mA mW C C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P12750EJ3V0DS00 (3rd edition) Date Published August 2000 NS CP(K) Printed in Japan
The mark * shows major revised points.
(c)
1997, 2000
NE72218
ELECTRICAL CHARACTERISTICS (TA = +25 C)
Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Phase Noise Symbol IGSO IDSS VGS (off) gm PN VGS = -5 V VDS = 3 V, VGS = 0 V VDS = 3 V, ID = 100 A VDS = 3 V, ID = 30 mA VDS = 3 V, ID = 30 mA, f = 11 GHz, 100 kHz offset VDS = 3 V, ID = 30 mA, f = 11 GHz, 10 kHz offset Power Gain Output Power at 1 dB Gain Compression Point GS PO (1 dB) VDS = 3 V, ID = 30 mA, f = 12 GHz VDS = 3 V, ID = 30 mA, f = 12 GHz Test Conditions MIN. - 30 -0.5 20 - - - - TYP. 1.0 60 -2.0 45 -110 -90 4.5 15.0 MAX. 10 120 -4.0 - - - - - Unit
A
mA V mS dBc/Hz dBc/Hz dB dBm
IDSS CLASSIFICATION
Rank 57 58 59 IDSS (mA) 30 to 120 65 to 120 30 to 75 Marking V57 V58 V59
2
Data Sheet P12750EJ3V0DS00
NE72218
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
500 100
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Total Power Dissipation Ptot (mW)
Drain Current ID (mA)
400
80 VGS = 0 V
300
60
200
40
-0.5 V
100
20 -1.0 V
0
50
100
150
200
250
0
1
2
3
4
5
Ambient Temperature TA (C)
Drain to Sourcr Voltage VDS (V)
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
VDS = 3 V 80
Drain Current ID (mA)
60
40
20
0 -4.0
-2.0 Gate to Source Voltage VGS (V)
0
Remark The graphs indicate nominal characteristics.
Data Sheet P12750EJ3V0DS00
3
NE72218
S-PARAMETERS MAG. AND ANG.
VDS = 3 V, ID = 10 mA
Frequency MHz 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 MAG. 0.896 0.849 0.801 0.741 0.687 0.630 0.578 0.534 0.498 0.466 0.437 0.411 0.395 0.395 0.408 0.435 0.477 0.525 0.572 0.621 0.656 0.694 0.720 0.744 0.772 0.803 0.819 0.837 0.843 0.848 0.844 0.847 0.854
S11 ANG. -41.7 -51.7 -62.1 -72.5 -83.1 -93.3 -103.7 -114.6 -126.0 -138.0 -151.0 -164.5 -177.9 167.8 152.7 138.7 125.5 113.8 103.8 95.4 88.0 80.8 73.7 66.6 59.8 52.6 47.0 42.5 39.1 36.8 35.4 33.2 30.9 MAG. 2.732 2.662 2.623 2.556 2.484 2.413 2.337 2.261 2.186 2.120 2.050 1.984 1.923 1.877 1.822 1.763 1.700 1.625 1.538 1.450 1.354 1.263 1.165 1.070 0.969 0.869 0.776 0.696 0.623 0.557 0.495 0.444 0.399
S21 ANG. 135.1 124.7 114.4 104.6 95.1 86.0 76.9 68.2 59.7 51.5 43.3 35.1 27.3 19.2 10.8 2.1 -6.6 -15.2 -24.0 -32.9 -41.2 -49.5 -58.1 -66.2 -74.2 -82.2 -88.5 -94.5 -99.9 -104.9 -109.7 -113.8 -117.7 MAG. 0.067 0.079 0.091 0.098 0.105 0.109 0.114 0.115 0.117 0.122 0.125 0.130 0.135 0.148 0.160 0.175 0.190 0.203 0.216 0.228 0.237 0.244 0.248 0.248 0.247 0.243 0.235 0.227 0.222 0.217 0.211 0.205 0.195
S12 ANG. 62.7 58.1 52.2 47.3 43.8 39.9 37.7 35.3 35.0 34.2 33.5 32.8 34.4 33.4 31.6 29.8 26.4 22.3 17.9 12.5 6.5 0.2 -5.9 -12.0 -18.2 -24.5 -29.5 -34.5 -39.0 -43.0 -47.9 -51.7 -55.5 MAG. 0.709 0.683 0.657 0.625 0.594 0.570 0.549 0.530 0.512 0.499 0.476 0.450 0.423 0.402 0.381 0.377 0.389 0.410 0.436 0.457 0.472 0.484 0.504 0.543 0.586 0.645 0.691 0.734 0.767 0.784 0.797 0.802 0.804
S22 ANG. -27.8 -34.1 -40.7 -46.9 -53.1 -59.3 -65.7 -71.7 -77.3 -81.8 -86.6 -91.7 -97.5 -106.7 -118.5 -131.9 -146.7 -160.7 -174.4 172.5 160.0 146.1 131.8 118.3 106.3 97.0 89.8 84.4 78.9 73.2 66.3 58.7 52.2
4
Data Sheet P12750EJ3V0DS00
NE72218
AMPLIFER PARAMETERS
VDS = 3 V, ID = 10 mA
S212 dB 8.73 8.50 8.38 8.15 7.90 7.65 7.37 7.09 6.79 6.53 6.23 5.95 5.68 5.47 5.21 4.93 4.61 4.22 3.74 3.23 2.63 2.03 1.33 0.59 -0.28 -1.22 -2.21 -3.15 -4.11 -5.09 -6.12 -7.05 -7.98 S122 dB -23.44 -22.04 -20.86 -20.17 -19.54 -19.22 -18.90 -18.81 -18.66 -18.30 -18.03 -17.73 -17.42 -16.60 -15.90 -15.16 -14.44 -13.87 -13.31 -12.86 -12.50 -12.27 -12.09 -12.10 -12.14 -12.28 -12.59 -12.88 -13.08 -13.29 -13.51 -13.77 -14.20 0.39 0.48 0.55 0.66 0.75 0.85 0.93 1.03 1.10 1.13 1.20 1.26 1.32 1.26 1.21 1.14 1.04 0.95 0.88 0.81 0.78 0.76 0.77 0.77 0.76 0.72 0.71 0.67 0.65 0.65 0.68 0.75 0.82
Frequency MHz 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000
GUmax dB 18.83 16.76 15.28 13.77 12.57 11.55 10.70 9.97 9.35 8.83 8.27 7.74 7.27 6.97 6.68 6.50 6.44 6.41 6.38 6.36 6.17 6.04 5.76 5.60 5.48 5.60 5.44 5.45 5.14 4.58 3.67 2.90 2.21
GAmax dB
K
Delay ns 0.058 0.058 0.057 0.055 0.053 0.051 0.050 0.048 0.047 0.045 0.045 0.046 0.043 0.045 0.047 0.049 0.048 0.048 0.049 0.049 0.046 0.046 0.048 0.045 0.044 0.044 0.035 0.033 0.030 0.028 0.026 0.023 0.022
Mason's U dB 23.662 23.219 22.068 20.102 19.595 18.153 17.841 16.857 16.530 16.398 15.252 13.995 12.822 12.769 12.379 12.271 12.698 13.096 13.357 13.657 13.187 12.458 10.685 9.478 8.699 8.737 8.174 8.590 8.343 7.597 6.421 4.782 3.605
G1 dB 7.06 5.53 4.45 3.47 2.77 2.19 1.76 1.46 1.24 1.06 0.92 0.80 0.74 0.74 0.79 0.91 1.12 1.40 1.72 2.12 2.44 2.85 3.17 3.50 3.93 4.49 4.82 5.24 5.39 5.52 5.40 5.48 5.67
G2 dB 3.04 2.73 2.45 2.15 1.89 1.71 1.56 1.43 1.32 1.25 1.11 0.98 0.86 0.77 0.68 0.66 0.71 0.80 0.92 1.02 1.10 1.16 1.27 1.52 1.83 2.33 2.82 3.36 3.86 4.15 4.38 4.47 4.52
11.96 10.83 10.19 9.42 8.74 8.19 7.99 7.78 7.81 8.34
Data Sheet P12750EJ3V0DS00
5
NE72218
S-PARAMETERS MAG. AND ANG.
VDS = 3 V, ID = 30 mA
Frequency MHz 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 MAG. 0.869 0.809 0.751 0.686 0.628 0.571 0.521 0.477 0.445 0.421 0.400 0.384 0.377 0.390 0.415 0.451 0.498 0.551 0.598 0.645 0.678 0.717 0.740 0.766 0.793 0.822 0.838 0.849 0.855 0.856 0.851 0.850 0.856
S11 ANG. -46.6 -57.6 -68.9 -80.0 -91.4 -102.5 -113.8 -125.9 -137.9 -150.6 -164.3 -178.6 168.0 154.1 140.2 127.5 115.8 105.5 96.7 89.2 82.5 75.9 69.1 62.3 55.7 49.1 43.8 39.6 36.2 34.2 32.8 30.7 28.6 MAG. 3.275 3.152 3.059 2.935 2.815 2.703 2.589 2.477 2.373 2.283 2.193 2.106 2.034 1.971 1.907 1.839 1.765 1.680 1.589 1.499 1.401 1.309 1.210 1.112 1.015 0.916 0.818 0.741 0.664 0.599 0.535 0.481 0.432
S21 ANG. 131.7 120.9 110.3 100.4 90.8 81.7 72.8 64.2 55.9 48.0 40.1 32.2 24.6 16.8 8.6 0.5 -8.0 -16.5 -24.7 -33.2 -41.1 -49.1 -57.3 -65.4 -73.2 -80.8 -87.3 -93.0 -98.7 -103.7 -108.5 -112.9 -116.9 MAG. 0.058 0.069 0.080 0.087 0.094 0.099 0.105 0.111 0.116 0.124 0.132 0.141 0.152 0.167 0.180 0.197 0.211 0.227 0.238 0.248 0.256 0.262 0.267 0.262 0.261 0.253 0.246 0.239 0.229 0.225 0.219 0.213 0.206
S12 ANG. 65.5 61.8 57.2 53.4 51.0 48.7 47.6 46.5 46.0 45.3 43.9 42.3 41.8 39.7 36.9 32.8 28.7 23.7 18.1 12.4 6.5 0.1 -6.8 -12.6 -18.9 -25.5 -30.0 -35.2 -39.9 -43.8 -48.4 -51.7 -56.3 MAG. 0.622 0.595 0.569 0.539 0.514 0.495 0.477 0.462 0.450 0.442 0.423 0.399 0.375 0.355 0.334 0.326 0.340 0.361 0.388 0.408 0.424 0.440 0.463 0.503 0.551 0.613 0.662 0.703 0.740 0.760 0.774 0.782 0.787
S22 ANG. -27.0 -32.9 -39.1 -44.6 -50.2 -56.0 -62.4 -67.9 -73.5 -77.7 -82.7 -87.5 -93.2 -102.6 -115.1 -130.0 -145.9 -161.6 -175.8 170.2 157.2 142.9 128.4 115.3 103.4 94.6 88.1 82.9 77.7 72.1 65.3 57.7 51.6
6
Data Sheet P12750EJ3V0DS00
NE72218
AMPLIFER PARAMETERS
VDS = 3 V, ID = 30 mA
S212 dB 10.30 9.97 9.71 9.35 8.99 8.64 8.26 7.88 7.51 7.17 6.82 6.47 6.16 5.90 5.61 5.29 4.93 4.51 4.03 3.52 2.93 2.34 1.66 0.92 0.13 -0.77 -1.74 -2.60 -3.56 -4.45 -5.43 -6.35 -7.29 S122 dB -24.67 -23.20 -21.98 -21.17 -20.56 -20.06 -19.60 -19.13 -18.71 -18.14 -17.61 -17.02 -16.35 -15.54 -14.89 -14.13 -13.50 -12.89 -12.48 -12.10 -11.85 -11.65 -11.48 -11.64 -11.66 -11.93 -12.18 -12.43 -12.80 -12.95 -13.17 -13.43 -13.73 0.48 0.60 0.69 0.81 0.90 0.99 1.06 1.12 1.16 1.17 1.19 1.21 1.21 1.15 1.11 1.05 0.97 0.90 0.84 0.79 0.78 0.76 0.76 0.77 0.76 0.72 0.71 0.68 0.67 0.67 0.70 0.77 0.81
Frequency MHz 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000
GUmax dB 18.54 16.47 15.02 13.60 12.50 11.56 10.76 10.04 9.45 8.96 8.43 7.92 7.49 7.20 6.94 6.77 6.70 6.69 6.66 6.64 6.47 6.40 6.15 6.03 6.01 6.16 6.01 5.91 5.59 5.03 4.13 3.31 2.63
GAmax dB
K
Delay ns 0.060 0.060 0.059 0.055 0.053 0.051 0.049 0.048 0.046 0.044 0.044 0.044 0.042 0.043 0.045 0.045 0.047 0.047 0.046 0.047 0.044 0.044 0.046 0.045 0.043 0.043 0.036 0.032 0.032 0.028 0.027 0.024 0.022
Mason's U dB 25.559 24.322 23.374 21.140 20.302 19.221 18.623 17.853 17.191 16.934 15.809 14.584 13.608 13.377 12.848 12.873 13.036 13.577 13.958 14.098 13.272 12.821 11.382 9.915 9.245 9.477 8.623 8.952 8.694 7.908 6.599 4.769 3.979
G1 dB 6.11 4.61 3.61 2.76 2.18 1.71 1.37 1.12 0.96 0.85 0.76 0.69 0.67 0.72 0.82 0.99 1.24 1.57 1.93 2.34 2.68 3.13 3.45 3.84 4.31 4.88 5.25 5.55 5.71 5.74 5.60 5.56 5.72
G2 dB 2.12 1.90 1.70 1.49 1.33 1.22 1.12 1.04 0.98 0.94 0.85 0.75 0.66 0.58 0.51 0.49 0.53 0.61 0.71 0.79 0.86 0.94 1.05 1.27 1.57 2.05 2.50 2.96 3.44 3.74 3.96 4.10 4.20
12.40 11.39 10.67 10.19 9.57 8.97 8.51 8.35 8.21 8.40
Data Sheet P12750EJ3V0DS00
7
NE72218
PACKAGE DIMENSIONS 4-PIN SUPER MINIMOLD (UNIT: mm)
2.10.2 1.250.1
2
3
0.65
0.3+0.1 -0.05
2.00.2
(1.25)
0.3+0.1 -0.05 0.15+0.1 -0.05 0.3+0.1 -0.05 (1.3)
V57
0.60
0.4+0.1 -0.05
1
0.90.1
0.3
PIN CONNECTIONS
1. 2. 3. 4. Source Gate Source Drain
8
Data Sheet P12750EJ3V0DS00
0 to 0.1
4
NE72218
PRECAUTION
(1) Because this device is a GaAs MES FET with a Schottky barrier gate structure, it is necessary that sufficient care be taken regarding static electricity and strong electric fields. Take measures against static electricity and make sure the body is earthed when mounting the device. (2) Follow the procedure below when operating the device by a gate-and-drain-independent dual power supply. * Directly ground both the source pins. * Fix VGS to approximately -4 V. * Increase VDS to a predetermined voltage level (within the recommended operating range of VDS). * Adjust VGS in line with a predetermined ID. (3) It is recommended that the bias application circuit be able to have a fixed voltage and current. (4) Adjust the I/O matching circuit after turning the bias OFF.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235 C or below, Time: 30 seconds or less (at 210 C or higher), Note Count: 3 times or less, Exposure limit: None Package peak temperature: 215 C or below, Time: 40 seconds or less (at 200 C or higher), Note Count: 3 times or less, Exposure limit: None Soldering bath temperature: 260 C or below, Time: 10 seconds or less, Note Count: 1 time, Exposure limit: None Pin temperature: 230 C or below, Time: 10 seconds or less (per pin row), Note Exposure limit: None Recommended Condition Symbol IR35-00-3
For soldering
VPS
VP15-00-3
Wave Soldering
WS60-00-1
Partial Heating
-
Note After opening the dry pack, store it at 25 C or less and 65 % RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For the details the recommended soldering conditions, refer to the document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P12750EJ3V0DS00
9
NE72218
[MEMO]
10
Data Sheet P12750EJ3V0DS00
NE72218
[MEMO]
Data Sheet P12750EJ3V0DS00
11
NE72218
CAUTION
The great care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
* The information in this document is current as of August, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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